ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,331, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Three-dimensional memory device and method" was invented by Chia-Yu Ling (Hsinchu, Taiwan), Katherine H. Chiang (New Taipei, Taiwan) and Chung-Te Lin (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "3D memory array devices and methods of manufacturing are described herein. A method includes etching a first trench and a second trench in a multilayer stack, the multilayer stack including alternating dielectric layers and sacrificial layers. The method further includes forming a word line by replacing a sacrificial layer with a conducti...