US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 10 for "Techniques for MRAM MTJ top electrode connection" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,619, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Techniques for MRAM MTJ top electrode connection" was invented by Harry-Hak-Lay Chuang (Zhubei, Taiwan), Chen-Pin Hsu (Taoyuan, Taiwan), Hung Cho Wang (Taipei, Taiwan), Wen-Chun You (Dongshan Township, Taiwan), Sheng-Chang Chen (Hsinchu County, Taiwan), Tsun Chung Tu (Tainan, Taiwan), Jiunyu Tsai (Hsinchu, Taiwan) and Sheng-Huang Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to a semiconductor structure having a magnetic tunnel junction (MTJ) on a substrate and a top electrode on the MTJ. A first seg...