US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Source/drain contact landing" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,360, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Source/drain contact landing" was invented by Shahaji B. More (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure according to the present disclosure includes a first p-type epitaxial feature disposed over a first fin, a second p-type epitaxial feature disposed and spanning over a second fin and a third fin, an interlayer dielectric (ILD) layer over the first p-type epitaxial feature and the second p-type epitaxial feature, a first contact extending through the ILD layer to electrically couple to the first...