ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,393, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor devices and methods of fabrication thereof" was invented by Shin-Jiun Kuang (Hsinchu, Taiwan), Meng-Yu Lin (Hsinchu, Taiwan), Chung-Wei Wu (Ju-Bei, Taiwan) and Chun-Fu Cheng (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal g...