US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 10 for "Nanostructure field-effect transistor device and method of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,402, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Nanostructure field-effect transistor device and method of forming" was invented by Wen-Kai Lin (Yilan County, Taiwan), Te-En Cheng (Taoyuan, Taiwan), Che-Hao Chang (Hsinchu, Taiwan), Chi On Chui (Hsinchu, Taiwan) and Yung-Cheng Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming a dummy gate structure over a fin structure that protrudes above a substrate, where the fin structure includes a fin and a layer stack over the fin, where the layer stack comprises alternating lay...