US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Method of forming transistors of different configurations" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,358, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming transistors of different configurations" was invented by Wei-Lun Min (Hsinchu, Taiwan) and Chang-Miao Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides semiconductor devices and methods of forming the same. A semiconductor device of the present disclosure includes a first source/drain feature and a second source/drain feature over a substrate, a plurality of channel members extending between the first source/drain feature and the second source/drain feature, a gate structure w...