US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 10 for "Interconnect structure and method of forming same" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,706, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Interconnect structure and method of forming same" was invented by Su-Jen Sung (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus comprises a first metal feature in a first dielectric layer over a substrate, wherein a sidewall portion of the first dielectric layer is over a top surface of the first metal feature, a second dielectric layer over the first dielectric layer and a second metal feature extending through the second dielectric layer, wherein a bottom of a first portion of the second metal feature is in contact wi...