ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,460, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"High absorption structure for optoelectronic device" was invented by Chun-Liang Lu (Tainan, Taiwan), Chun-Hao Chou (Tainan, Taiwan), Kuo-Cheng Lee (Tainan, Taiwan) and Wei-Lin Chen (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Some implementations described herein provide an optoelectronic device and methods of formation. The optoelectronic device is fabricated using a series of operations that includes a patterning operation using a layer of a negative photoresist material, followed by a single dry etch operation, a single wet st...