ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,310, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Gate isolation structures" was invented by Chi-Wei Wu (Hsinchu, Taiwan), Hsin-Che Chiang (Taipei, Taiwan) and Jeng-Ya Yeh (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An IC structure and a method of forming the same are provided. In an embodiment, an exemplary method of forming the IC structure includes forming a first semiconductor fin and a second semiconductor fin protruding from a substrate, forming a high-k metal gate (HKMG) structure over the first semiconductor fin and the second semiconductor fin, forming a trench...