US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Formation method of semiconductor device with stacked conductive structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,701, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Formation method of semiconductor device with stacked conductive structures" was invented by Chun-Yuan Chen (HsinChu, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes forming a first conductive structure surrounded by a first dielectric layer and forming a second dielectric layer over the first conductive str...