US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Ferroelectric tunnel junction (FTJ) structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,335, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Ferroelectric tunnel junction (FTJ) structures" was invented by Kuen-Yi Chen (Hsinchu, Taiwan), Yu-Sheng Chen (Taoyuan, Taiwan), Yi Ching Ong (Hsinchu, Taiwan) and Kuo-Ching Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are ferroelectric tunnel junction (FTJ) structures, memory devices, and methods for fabricating such structures and devices. An FTJ structure includes a first electrode, a ferroelectric material layer, and a catalytic metal layer in contact with the ferroelectric material layer."

The patent was...