US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 10 for "Double gate ferroelectric field effect transistor devices and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,383, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Double gate ferroelectric field effect transistor devices and methods for forming the same" was invented by Yen-Chieh Huang (Changhua County, Taiwan), Song-Fu Liao (Taipei, Taiwan), Po-Ting Lin (Taichung, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan), Sai-Hooi Yeong (Hsinchu, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chung-Te Lin (Taiwan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric field effect transistor (FeFET) having a double-gate structure includes a first gate electrode, a first ferroelectric material layer over the fir...