US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Different isolation liners for different type FinFETs and associated isolation feature fabrication" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,697, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD..

"Different isolation liners for different type FinFETs and associated isolation feature fabrication" was invented by Tzung-Yi Tsai (Taoyuan, Taiwan), Tsung-Lin Lee (Hsinchu County, Taiwan) and Yen-Ming Chen (Hsin-Chu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Different isolation liners for different type FinFETs and associated isolation feature fabrication are disclosed herein. An exemplary method includes performing a fin etching process on a substrate to form first trenches defining first fins in a first region and second trenches defining secon...