ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,473, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Back-trench isolation structure" was invented by Cheng-Ying Ho (Minxiong Township, Taiwan), Wen-De Wang (Minsyong Township, Taiwan), Kai-Chun Hsu (Yonghe, Taiwan), Sung-En Lin (Taoyuan, Taiwan), Yuh-Ruey Huang (Hsinchu County, Taiwan) and Jen-Cheng Liu (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an image sensor integrated chip (IC). The image sensor IC includes one or more interconnects arranged within an inter-level dielectric (ILD) structure on a first side of a substrate. An image sensing e...