ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,594, issued on Dec. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Spacer structures for semiconductor devices" was invented by Yi-Chen Lo (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device having a protection layer on inner spacer structures. The semiconductor device includes a nanostructure on a substrate. The nanostructure includes multiple semiconductor layers. The semiconductor device further includes a gate structure wrapped around a middle portion of the multiple semiconductor layers and a spacer structure adjacent to an end portion of the m...