US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 9 for "Semiconductor structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,432, issued on Dec. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and method for forming the same" was invented by Meng-Hsien Li (Hsinchu, Taiwan), Ying-Hsin Hung (Hsinchu, Taiwan), Yu-Shan Yeh (Hsinchu County, Taiwan), Li-Min Chen (Hsinchu County, Taiwan), Neng-Jye Yang (Hsinchu, Taiwan) and Kuo-Bin Huang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a semiconductor substrate, a dielectric layer, a tungsten plug, a conductive plug, and a contact barrier. The dielectric layer is over a semiconductor substrate. The tungsten plug...