US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 9 for "Semiconductor device with leakage current suppression and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,579, issued on Dec. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with leakage current suppression and method of forming the same" was invented by Shang-Rong Li (Hsinchu, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan), Wen-Chun Keng (Hsinchu County, Taiwan), Chih-Chuan Yang (Hsinchu, Taiwan), Chih-Hsiang Huang (Hsinchu County, Taiwan) and Ping-Wei Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a fin, the fin having an epitaxial portion and a base portion protruding from a substrate. Sidewalls of the base portion ...