US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 9 for "Semiconductor device having strained channel and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,566, issued on Dec. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having strained channel and method for manufacturing the same" was invented by Chia-Ling Pai (Hsinchu, Taiwan), Hsiang-Pi Chang (Hsinchu, Taiwan), Shen-Yang Lee (Hsinchu, Taiwan), Fu-Ting Yen (Hsinchu, Taiwan), Huang-Lin Chao (Hsinchu, Taiwan), Pinyen Lin (Hsinchu, Taiwan) and I-Ming Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes: forming a semiconductor stack on a semiconductor substrate in a flat state, the semiconductor stack including sacri...