US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 9 for "Semiconductor device for recessed fin structure having rounded corners" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,572, issued on Dec. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device for recessed fin structure having rounded corners" was invented by Cheng-Yen Yu (New Taipei, Taiwan), Po-Chi Wu (Zhubei, Taiwan) and Yueh-Chun Lai (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device including a Fin FET, a fin structure extending in a first direction is formed over a substrate. An isolation insulating layer is formed over the substrate so that an upper portion of the fin structure is exposed from the isolation insulating layer. A gate structure ...