US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 9 for "Semiconductor device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,571, issued on Dec. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Chih-Chuan Yang (Tainan, Taiwan), Kuo-Hsiu Hsu (Zhongli, Taiwan), Feng-Ming Chang (Zhubei, Taiwan), Kian-Long Lim (Hsinchu, Taiwan) and Lien Jung Hung (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including nanosheet field-effect transistors (NSFETs) in a first region and fin field-effect transistors (FinFETs) in a second region and methods of forming the same are disclosed. In an embodiment, a device includes a first memory cell, the first memory cell including...