ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,598, issued on Dec. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and manufacturing method thereof" was invented by I-Wen Huang (Taipei, Taiwan), Ching-Feng Fu (Taichung, Taiwan) and Guan-Ren Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method are provided. The semiconductor device includes gate structures extending on a substrate along a first direction and arranged in a second direction in parallel with one another, source and drain regions disposed in the substrate between the parallel gate structures, and dielectric structures disposed o...