ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,603, issued on Dec. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method for the same" was invented by Chih-Nan Lo (Hsinchu, Taiwan), Ming-Chi Huang (Hsinchu County, Taiwan), Hsin-Hsien Lu (Hsinchu, Taiwan), Ming-Hsi Yeh (Hsinchu, Taiwan) and Kuo-Bin Huang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for fabricating a semiconductor structure, including forming a dielectric layer over a first region and a second region of a substrate, wherein the second region is adjacent to the first region, increasing a t...