ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,492,468, issued on Dec. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"SACVD system and method for reducing obstructions therein" was invented by Kuang-Wei Cheng (Hsinchu, Taiwan), Cheng-Lung Wu (Zhunan, Taiwan) and Chyi-Tsong Ni (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Systems and methods for reducing obstructions in an exhaust line of a sub-atmospheric chemical vapor deposition (SACVD) system are disclosed. Such obstruction may occur due to the reaction of a silicon precursor with ozone, which forms solid particles in the exhaust line. A catalytic apparatus is provided which catalyzes the d...