US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 9 for "Resistive random access memory based one-time-programmable memory devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,250, issued on Dec. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Resistive random access memory based one-time-programmable memory devices" was invented by Yu-Der Chih (Hsinchu, Taiwan) and Chung-Cheng Chou (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first memory array including a plurality of first memory bits. Each of the plurality of first memory bits is configured as a one-time-programmable (OTP) memory bit. A second memory array includes a plurality of second memory bits, each of the plurality of second memory bits being configured as a multi-time-programmable (...