ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,368, issued on Dec. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Photoresist and method" was invented by Chih-Cheng Liu (Hsinchu, Taiwan), Yi-Chen Kuo (Taichung, Taiwan), Yen-Yu Chen (Taipei, Taiwan), Jr-Hung Li (Chupei, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Photoresists and methods of forming and using the same are disclosed. In an embodiment, a method includes spin-on coating a first hard mask layer over a target layer; depositing a photoresist layer over the first hard mask layer using chemical vapor deposition or atomic layer deposition, the photoresist laye...