US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 9 for "Method of manufacturing semiconductor devices and semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,366, issued on Dec. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor devices and semiconductor devices" was invented by Shih-Ming Chang (Hsinchu, Taiwan), Yu-Tse Lai (Zhubei, Taiwan) and Yu-Fu Wang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a conductive pattern is formed in a surface region of a dielectric layer, a mask pattern including an opening over the conductive pattern is formed over the dielectric layer, a part of the conductive pattern is converted into a high-resistant part having a higher ...