US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 9 for "Isolation structures for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,607, issued on Dec. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Isolation structures for semiconductor devices" was invented by Chao-Shuo Chen (Hsinchu County, Taiwan), Chia-Der Chang (Hsinchu, Taiwan) and Yi-Jing Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with an isolation structure and a method of fabricating the same are disclosed. The semiconductor device includes first and second fin structures disposed on a substrate and first and second pairs of gate structures disposed on the first and second fin structures. The first end surfaces of the first pair of gate ...