ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,436, issued on Dec. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated passive device dies and methods of forming and placement of the same" was invented by Shang-Lun Tsai (Hsinchu, Taiwan), Shuo-Mao Chen (New Taipei, Taiwan), Po-Ying Lai (Hsinchu, Taiwan), Monsen Liu (Hsinchu, Taiwan) and Shin-Puu Jeng (Po-Shan Village, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating integrated passive device dies includes forming a first plurality of integrated passive devices on a substrate, forming a plurality of micro-bumps on the first plurality of integrated passive devices such that the ...