US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 9 for "Gate structure for semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,601, issued on Dec. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate structure for semiconductor device" was invented by Huan-Chieh Su (Tianzhong Township, Taiwan), Chih-Hao Wang (Baoshan Township, Taiwan) and Kuo-Cheng Ching (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate and a gate structure over the substrate, where the gate structure can include two opposing spacers, a dielectric layer formed on side surfaces of the two opposing spacers, and a gate met...