ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,606, issued on Dec. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Gate isolation structure" was invented by Jia-Chuan You (Taoyuan County, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present disclosure includes a first gate structure and a second gate structure aligned along a direction, a first metal layer disposed over the first gate structure, a second metal layer disposed over the second gate structure, and a...