US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 9 for "Epitaxial features in semiconductor devices and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,534, issued on Dec. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Epitaxial features in semiconductor devices and method of forming the same" was invented by Chih-Chuan Yang (Hsinchu, Taiwan), Wen-Chun Keng (Hsinchu County, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan), Hsin-Wen Su (Hsinchu, Taiwan), Yu-Kuan Lin (Taipei, Taiwan), Ping-Wei Wang (Hsin-Chu, Taiwan) and Jing-Yi Lin (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first fin protruding from a substrate in a first region of the substrate and a second fin protruding from the substrate in a second region of the subst...