US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 9 for "Controlling trap formation to improve memory window in one-time program devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,547, issued on Dec. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Controlling trap formation to improve memory window in one-time program devices" was invented by Hsin-Wen Su (Dounan Township, Taiwan), Lien Jung Hung (Taipei, Taiwan), Ping-Wei Wang (Hsin-Chu, Taiwan), Yu-Kuan Lin (Taipei, Taiwan) and Shih-Hao Lin (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a one-time program (OTP) memory cell. The OTP memory cell includes a read transistor and a program transistor neighboring the read transistor. The read transistor includes a read dielect...