ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,908, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Vertically stacked FeFETs with common channel" was invented by Georgios Vellianitis (Heverlee, Belgium) and Gerben Doornbos (Kessel-Lo, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "Ferroelectric field effect transistors are in a three-dimensional structure that includes vertical columns. Source/drain electrodes are provided by horizontal conductive layers that are interleaved with dielectric layers. Channels for the FeFETs in each vertical column are provided by a continuous semiconductor layer, e.g., a vertical strip of semiconductor. A...