US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 30 for "Vertical transistors and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,940, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Vertical transistors and methods for forming the same" was invented by Ming-Yen Chuang (Hsinchu, Taiwan), Katherine H. Chiang (New Taipei, Taiwan) and Yun-Feng Kao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes vertical stacks located over a substrate, wherein each of the vertical stacks includes from bottom to top, a bottom electrode, a dielectric pillar structure including a lateral opening therethrough, and a top electrode; layer stacks located over the vertical stacks, wherein each of the lay...