US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 30 for "Tuning threshold voltage in nanosheet transitor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,953, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Tuning threshold voltage in nanosheet transitor devices" was invented by Chung-Wei Hsu (Baoshan Township, Taiwan), Hou-Yu Chen (Zhubei, Taiwan), Chih-Hao Wang (Baoshan Township, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Kuo-Cheng Chiang (Zhubei, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan), Mao-Lin Huang (Hsinchu, Taiwan), Jia-Ni Yu (New Taipei, Taiwan) and Lung-Kun Chu (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to an integrated chip that includes a first nanosheet field ef...