US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 30 for "Semiconductor devices including backside power via and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,408, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices including backside power via and methods of forming the same" was invented by Po-Hsien Cheng (Hsinchu, Taiwan), Zhen-Cheng Wu (Hsinchu, Taiwan), Tze-Liang Lee (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming vias for coupling source/drain regions to backside interconnect structures in semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a conductive feature adjacent a gate structur...