ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,937, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor devices and methods of fabrication thereof" was invented by Shih-Cheng Chen (New Taipei, Taiwan), Zhi-Chang Lin (Hsinchu County, Taiwan), Jung-Hung Chang (Changhua County, Taiwan), Lo-Heng Chang (Hsinchu, Taiwan), Chien-Ning Yao (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to an un-doped or low-doped epitaxial layer formed below the source/drain features. The un-doped or low-doped e...