US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 30 for "Semiconductor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,956, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method of forming the same" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes source and drain regions, a channel region between the source and drain regions, and a gate structure over the channel region. The gate structure includes a gate dielectric over the channel region, a work function metal layer over the gate dielectric and comprising iodine, and a fill metal over the wor...