US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 30 for "Selective formation of titanium silicide and titanium nitride by hydrogen gas control" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,324, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Selective formation of titanium silicide and titanium nitride by hydrogen gas control" was invented by Cheng-Wei Chang (Taipei, Taiwan), Kao-Feng Lin (Hsinchu, Taiwan), Min-Hsiu Hung (Tainan, Taiwan), Yi-Hsiang Chao (New Taipei, Taiwan), Huang-Yi Huang (Hsin-chu, Taiwan) and Yu-Ting Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, an...