US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 30 for "Selective etching to increase threshold voltage spread" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,961, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Selective etching to increase threshold voltage spread" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Ya-Huei Li (Tainan, Taiwan), Da-Yuan Lee (Jhubei, Taiwan) and Ching-Hwanq Su (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a gate dielectric comprising a portion extending on a semiconductor region, forming a barrier layer comprising a portion extending over the portion of the gate dielectric, forming a work function tuning layer comprising a portion over the portion of the barrier layer, doping a doping...