US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 30 for "Photoresist composition and method of forming photoresist pattern" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,510,821, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Photoresist composition and method of forming photoresist pattern" was invented by Li-Po Yang (Hsinchu, Taiwan) and Ching-Yu Chang (Yuansun Village, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The photoresist layer inc...