US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 30 for "Photoresist and formation method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,319, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Photoresist and formation method thereof" was invented by Hui-Chun Lee (Hsinchu, Taiwan), Tung-Hung Feng (Hsinchu, Taiwan) and Peng-Ting Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer is exposed. An organic treatment to the photoresist layer is performed. After performing the organic treatment, the photoresist layer is developed. The material layer is etche...