US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 30 for "Multi-gate device and related methods" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,931, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Multi-gate device and related methods" was invented by Shih-Cheng Chen (New Taipei, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Zhi-Chang Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a device includes providing a fin having a plurality of channel layers and a plurality of multilayer epitaxial layers interposing the plurality of channel layers. The multilayer epitaxial layers include a first epitaxial layer interposed between second and third epitaxial layers. The first epitaxial laye...