US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 30 for "Method of forming semiconductor device comprising conductive feature, dielectric layer adjacent conductive feature, and etch stop layer on top surface of dielectric layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,403, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Method of forming semiconductor device comprising conductive feature, dielectric layer adjacent conductive feature, and etch stop layer on top surface of dielectric layer" was invented by Shao-Kuan Lee (Kaohsiung, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan), Hsin-Yen Huang (New Taipei, Taiwan), Shau-Lin Shue (Hsinchu, Taiwan) and Cheng-Chin Lee (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first conductive feature, a second conductive feature, and a first dielectric layer positioned between the fir...