US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 30 for "Method of forming memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,907, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming memory device" was invented by Chao-I Wu (Hsinchu County, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan) and Han-Jong Chia (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory device and a method of forming the same. The memory device includes a first tier on a substrate and a second tier on the first tier. The first tier includes a first layer stack; a first gate electrode penetrating through the first layer stack; a first channel layer between the first layer sta...