US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 30 for "Method for fabricating an integrated circuit comprising devices on opposing sides of a substrate" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,912, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for fabricating an integrated circuit comprising devices on opposing sides of a substrate" was invented by Perng-Fei Yuh (Walnut Creek, Calif.), Chansyun David Yang (Hsinchu, Taiwan), Keh-Jeng Chang (Hsinchu, Taiwan) and Chan-Lon Yang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating an integrated circuit device is provided. The method includes forming a transistor device over a front side of the semiconductor substrate; forming a first contact feature in the semiconductor substrate, wherein the fir...