US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 30 for "Memory device with source lines in parallel" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,132, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. LTD. (Hsinchu, Taiwan).

"Memory device with source lines in parallel" was invented by Ku-Feng Lin (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array having a plurality of memory cells arranged in rows and columns, each row of memory cells being associated with a word line, each column of memory cells being associated with a bit line and a source line. Each memory cell includes: a storage device coupled to the bit line, the storage device being selectable between a first resistance state and a second resistance s...