US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 30 for "Memory device, method, layout, and system" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,131, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device, method, layout, and system" was invented by Yen Lin Chung (Hsinchu, Taiwan), Kao-Cheng Lin (Hsinchu, Taiwan), Wei Min Chan (Hsinchu, Taiwan) and Yen-Huei Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory macro includes an input/output (I/O) circuit positioned in a semiconductor wafer, a column of memory cells including first and second subsets of contiguous memory cells extending away from the I/O circuit in the semiconductor wafer, wherein the first subset is positioned between the I/O circuit and th...