US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 30 for "Magneto-resistive random-access memory (MRAM) devices and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,130, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Magneto-resistive random-access memory (MRAM) devices and methods of forming the same" was invented by Hsuan-Yi Peng (Hsinchu, Taiwan), Cherng-Yu Wang (Hsinchu, Taiwan), Jen-Po Lin (Taipei, Taiwan) and Hsiao-Kuan Wei (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a magnetic tunnel junction (MTJ) structure for storing a data. In one embodiment, the MJT structure includes a first ferromagnetic layer, a second ferromagnetic layer disposed above the first ferromagnetic layer, a first d...