US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 30 for "Magnetic memory device and manufacturing method thereof" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,128, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Magnetic memory device and manufacturing method thereof" was invented by Ming-Yuan Song (Hsinchu, Taiwan), Chien-Min Lee (Hsinchu County, Taiwan), Shy-Jay Lin (Hsinchu County, Taiwan), Tung-Ying Lee (Hsinchu, Taiwan) and Xinyu Bao (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a substrate, a spin-orbit torque (SOT) induction structure, and a magnetic tunnel junction (MTJ) stack. The SOT induction structure is disposed over the substrate. The SOT induction structure includes a metal and at least on...